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V10D100C-M3, V10D100CHM3
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.
48 V at IF = 2.
5 A
TMBS ® eSMP® Series
TO-263AC (SMPD)
K
1
2 Top View
Bottom View
V10D100C
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
2 x 5.
0 A
VRRM
100 V
IFSM VF at IF = 5.
0 A (TA = 125 °C)
TJ max.
100 A 0.
60 V 150 °C
Package
TO-263AC (SMPD)
Diode variations
Dual common cathode
FEATURES • Trench MOS
Schottky technology generation 2 • Very low profile - typical height of 1.
7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF ...