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V10D120C-M3, V10D120CHM3
Vishay General Semiconductor
Dual High-Voltage TMBS® (Trench MOS Barrier
Schottky) Rectifier
Ultra Low VF = 0.
53 V at IF = 2.
5 A
eSMP® Series SMPD (TO-263AC)
K
1
2 Top View
Bottom View
V10D120C
Anode 1
K
Anode 2
Cathode
DESIGN SUPPORT TOOLS AVAILABLE
3D 3D
3D Models
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 5.
0 A (TA = 125 °C) TJ max.
Package
2 x 5.
0 A 120 V 100 A 0.
64 V 150 °C
SMPD (TO-263AC)
Circuit configuration
Common cathode
FEATURES • Trench MOS
Schottky technology • Very low profile - typical height of 1.
7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meet...