PRELIMINARY
Notice:This is not a final specification Some parametric are subject to change.
SMALL-SIGNAL
TRANSISTOR
INA6006AS1
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON
PNP EPITAXIAL TYPE
DESCRIPTION
INA6006AS1 is a silicon
PNP transistor.
It is designed with high voltage.
FEATURE
・Small package for easy mounting.
・High voltage VCEO = -150V ・Low voltage VCE(sat) = -0.
5V(MAX) ・Complementary : INC6006AS1
APPLICATION
High voltage switching.
OUTLINE DRAWING
4.
0
UNIT:mm
7.
5MAX
14.
0 13.
0MIN 3.
0
1.
0 1.
0
0.
1 0.
45 2.
5 2.
5
①②③
0.
4
2.
5
TERMINAL CONNECTOR ①:EMITTER ②:COLLECTOR ③:BASE
JEITA:JEDEC:-
MAXIMUM RATING(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collector to Base voltage VEBO Emitter to...