INC5003AH1

PRELIMINARY Notice：This is not a final specification Some parametric are subject to change. FEATURE ・Linearity of hFE is good ・Low voltage VCE(sat) = 250mV(MAX),Ic=2A ・Complementary INA5003AH1 TRANSISTOR INC5003AH1 SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING 6.60 5.34 UNIT：ｍｍ 2.30 0.50 0.83 2.74 6.10 2.16 10.00 1.52 APPLICATION Motor drive, IGBT drive...