ISC6053AM1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON
NPN EPITAXIAL TYPE
DESCRIPTION
ISC6053AM1 is a silicon
NPN epitaxial type
transistor Designed with high collector current, low VCE(sat).
FEATURE
●High collector current IC（MAX）=650mA
●Low collector to emitter saturation voltage VCE（sat）0.
5Vmax
2.
0 1.
3 0.
65 0.
65
0.
3
OUTLINE DRAWING
2.
1 0.
425 1.
25 0.
425
Unit：mm
① ②③
0.
9 0.
7 0～0.
1 0.
15
APPLICATION
For switching application, small type motor drive application.
TERMINAL CONNECTOR ①：BASE ②：EMITTER ③：COLLECTOR
JEITA：SC-70 JEDEC： －
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
VCEO Collector to Emitter voltage VCBO Collector to Base voltage VEBO Emitter to Base voltage
IC...