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V3PAL45
Vishay General Semiconductor
Surface Mount Trench MOS Barrier
Schottky Rectifier
TMBS® SMPATM
Top View
Bottom View
DO-221BC (SMPA)
FEATURES • Very low profile - typical height of 0.
95 mm • Ideal for automated placement • Trench MOS
Schottky technology • Low power losses, high efficiency • Low forward voltage drop • AEC-Q101 qualified • Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C • Material categorization: For definitions of compliance
please see www.
vishay.
com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM
3.
0 A 45 V 80 A
VF at IF = 3.
0 A (TA = 125 °C)
0.
37 V
TJ max.
150 °C
Package
DO-221BC (SMPA)
Diode variation
Single die
TYPICA...