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V4PAN50
Vishay General Semiconductor
Surface Mount Trench MOS Barrier
Schottky Rectifier
TMBS® SMPATM
Top View
Bottom View
DO-221BC (SMPA)
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 4.
0 A (TA = 125 °C) TJ max.
Package
4.
0 A 50 V 80 A 0.
46 V 150 °C DO-221BC (SMPA)
Diode variation
Single die
FEATURES • Very low profile - typical height of 0.
95 mm • Ideal for automated placement • Trench MOS
Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C • Material categorization: For definitions of compliance
please see www.
vishay.
com/doc?99912
TYPICAL APPLICATIONS For use in lo...