SWITCHING DIODE RoHS BAS19LT1 Features Power dissipation PD : 225 mW (Tamb=25 C) Pluse Drain DIF : 200 mA TReverse Voltage VR : 120V .
,LOperating and storage junction temperature range Tj, Tstg : -55 C to +150 C 1 1.
2.
4 1.
3 SOT-23 3 2 1.
BASE 2.
EMITTER 3.
COLLECTOR COANODE-CATHODE 3 IC1 2 ANODE CATHODE Marking:JP 2.
9 1.
9 0.
95 0.
95 0.
4 Unit:mm ONElectro-Optical Characteristics RParameter Symbol TReverse breakdown voltage V(BR) CReverse Voltage leakage current IR EForward Voltage LDiode Capacitance WEJ EReverse Recovery Time VF CD trr Test Condition IR=100 A VR=100V IF=100mA IF=200mA VR=0V f=1MHz (Ta=25 C) MIN.
MAX.
Unit 120 V 0.
1 1000 1250 5 A mV pF 50 nS WEJ ELECTRONIC ...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)