MPSA65 / MMBTA65 / PZTA65
Discrete POWER & Signal Technologies
MPSA65
MMBTA65
PZTA65
C BE
TO-92
C
SOT-23
Mark: 2W
E B
C
SOT-223
C B
E
PNP Darlington
Transistor
This device is designed for applications requiring extremely high current gain at currents to 800 mA.
Sourced from Process 61.
See MPSA64 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCES
Collector-Emitter Voltage
30
VCBO VEBO IC
Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
30 10 1.
2
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of ...