STU/D334SGre
Pro
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
Ver 1.
0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (m ) Max
4.
7 @ VGS=10V 30V 60A
6.
8 @ VGS=4.
5V
FEATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
G S
STU SERIES TO - 252AA( D- PAK )
G DS
STD SERIES TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage ID Drain Current-Continuous IDM -Pulsed a
TC=25°C TC=70°C
EAS Single Pulse Avalanche Energy c
PD
Maximum Power Dissipation
TC=25°C TC=70°C
TJ, TSTG
Operating Junction and Storage Temp...