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Part Number
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S-LSI1013LT1G |
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Manufacturer
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LRC |
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Description
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P-Channel 1.8-V (G-S) MOSFET |
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Published
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Apr 18, 2016 |
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Detailed Description
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LESHAN RADIO COMPANY, LTD.
P-Channel 1.8-V (G-S) MOSFET
LSI1013LT1G S-LSI1013LT1G
FEATURES D TrenchFETr Power MOSFET:...
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Datasheet
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S-LSI1013LT1G
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Overview
LESHAN RADIO COMPANY, LTD.
P-Channel 1.
8-V (G-S) MOSFET
LSI1013LT1G S-LSI1013LT1G
FEATURES D TrenchFETr Power MOSFET: 1.
8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 1.
2 W D Low Threshold: 0.
8 V (typ) D Fast Switching Speed: 14 ns D S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
BENEFITS D Ease in Driving Switches D Low Offset (Error) Voltage D Low-Voltage Operation D High-Speed Circuits D Low Battery Voltage Operation
APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories D Battery Operated Systems D Power Supply Converter Circuits...
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