Part Number
|
INJ0212AP1 |
Manufacturer
|
Isahaya Electronics Corporation |
Description
|
Silicon P-channel MOSFET |
Published
|
Apr 19, 2016 |
Detailed Description
|
INJ0212AP1
High Speed Switching Silicon P-channel MOSFET
DESCRIPTION
INJ0210AP1 is a Silicon P-channel MOSFET. This pro...
|
Datasheet
|
INJ0212AP1
|
Overview
INJ0212AP1
High Speed Switching Silicon P-channel MOSFET
DESCRIPTION
INJ0210AP1 is a Silicon P-channel MOSFET.
This product is most suitable for use such as portable machinery, because of low voltage drive and low on resistance.
OUTLINE DRAWING
4.
4 1.
6
UNIT:mm 1.
5
1.
0 2.
4
FEATURE
SDG
MARKING
・Input impedance is high, and not necessary to consider a drive electric current.
・High drain current ID=-2.
5A ・Vth is low, and drive by low voltage is possible.
Vth=1.
0~2.
5V ・Low on Resistance.
RDS(on)=95mΩ(TYP).
・High speed switching.
APPLICATION
0.
5 1.
5
3.
0
0.
4
0.
4
TERMINAL CONNECTOR S:SOURCE D:DRAIN G:GATE
JEITA:SC-62 JEDEC:SOT-89
Switching
MAXIMUM RATING (Ta=25℃)
Symbol
Parameter
R...
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