CGH31240F
240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Cree’s CGH31240F is a gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.
7-3.
1GHz S-Band radar amplifier applications.
The
transistor is supplied in a ceramic/metal flange package.
PackaPgeN:TCypGeH: 3414204200F1
Typical Performance Over 2.
7-3.
1 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.
7 GHz
2.
8 GHz
2.
9 GHz
3.
0 GHz
Output Power
243 249 249 245
3.
1 GHz 243
Gain
11.
9
11.
9
11.
9
11.
9
11.
9
Power Added Efficiency
60
61
60
59
52
Note:...