CGH55015F1 / CGH55015P1
15 W, 5500-5800 MHz, GaN HEMT for WiMAX
Cree’s CGH55015F1/CGH55015P1 is a gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1 ideal for 5.
5-5.
8 GHz WiMAX and linear amplifier applications.
The
transistor is available in both screw-down, flange and solder-down, pill packages.
Based on appropriate external match adjustment, the CGH55015F1/CGH55015P1 is suitable for 4.
9 - 5.
5 GHz applications as well.
PPNa:cCkGagHe5T5y0p1e5:P4140&1C9G6H&554041051F616
Typical Performance 5.
5-5.
8GHz (TC = 25˚C)
Parameter
5.
50 GHz
Small Signal Gain
10.
...