CGHV22100
100 W, 1800-2200 MHz, GaN HEMT for LTE
Cree’s CGHV22100 is a gallium nitride (GaN) high electron mobility
transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22100 ideal for 1.
8 - 2.
2 GHz LTE, 4G Telecom and BWA amplifier applications.
The
transistor is input matched and supplied in a ceramic/ metal flange package.
PNPa: CckGaHgVe2T2y1p0e0: F44a0n1d6C2GaHndV2424100106P1
Typical Performance Over 1.
8 - 2.
2 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
1.
8 GHz
2.
0 GHz
2.
2 GHz
Gain @ 44 dBm
18.
7
20.
7
22.
0
ACLR @ 44 dBm
-37.
8
-37.
1
-35.
1
Drain Efficiency @ 44 dBm
35.
4
31.
7
30.
6
Not...