Part Number
|
SMG2370N |
Manufacturer
|
SeCoS |
Description
|
N-Channel MosFET |
Published
|
Apr 20, 2016 |
Detailed Description
|
Elektronische Bauelemente
SMG2370N
1.8 A, 100 V, RDS(ON) 280 m N-Channel Enhancement Mode Mos.FET
RoHS Compliant Prod...
|
Datasheet
|
SMG2370N
|
Overview
Elektronische Bauelemente
SMG2370N
1.
8 A, 100 V, RDS(ON) 280 m N-Channel Enhancement Mode Mos.
FET
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printer , PCMCIA cards, cellular and cordless telephones.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SC-59 saves board Space.
Fast switching speed.
High pe...
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