TSM70N750 Taiwan Semiconductor N-Channel Power MOSFET 700V, 6A, 0.
75Ω FEATURES ● Super-Junction technology ● High performance due to small figure-of-merit ● High ruggedness performance ● High commutation performance APPLICATION ● Power Supply ● Lighting KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) Qg 700 V 0.
75 Ω 10.
7 nC TO-251 (IPAK) TO-252 (DPAK) Notes: Moisture sensitivity level: level 3.
Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C TC = 100°C Total Power Dissipation @ TC = 25°C Single...

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