Part Number
|
TSM900N10 |
Manufacturer
|
Taiwan Semiconductor |
Description
|
N-Channel Power MOSFET |
Published
|
Apr 23, 2016 |
Detailed Description
|
TSM900N10
Taiwan Semiconductor
N-Channel Power MOSFET
100V, 15A, 90mΩ
FEATURES
● 100% avalanche tested ● Low gate char...
|
Datasheet
|
TSM900N10
|
Overview
TSM900N10
Taiwan Semiconductor
N-Channel Power MOSFET
100V, 15A, 90mΩ
FEATURES
● 100% avalanche tested ● Low gate charge for fast switching ● Pb-free plating ● RoHS compliant ● Halogen-free mold compound
APPLICATION
● Networking ● Load Switching ● LED Lighting Control ● AC-DC Secondary Rectification
TO-251S (IPAK SL)
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
VDS
RDS(on) (max)
VGS = 10V VGS = 4.
5V
Qg
100 90 100 9.
3
V mΩ nC
TO-252 (DPAK)
Notes: Moisture sensitivity level: level 3.
Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1) Pulsed Drain Curre...
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