TSM950N10 Taiwan Semiconductor N-Channel Power MOSFET 100V, 6.
5A, 95mΩ FEATURES ● 100% avalanche tested ● Fast switching ● Pb-free plating ● RoHS compliant ● Halogen-free mold compound APPLICATION ● Networking ● Load Switch ● Lighting KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) VGS = 10V VGS = 4.
5V Qg 100 95 110 9.
3 V mΩ nC SOT-223 Notes: Moisture sensitivity level: level 3.
Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 100 Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C TC = 100°C VGS ID IDM ±20 6.
5 4.
1 26 Total Power Dissipa...

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