|
Part Number
|
RU1H60R |
|
Manufacturer
|
Ruichips |
|
Description
|
N-Channel Advanced Power MOSFET |
|
Published
|
Apr 25, 2016 |
|
Detailed Description
|
RU1H60R
N-Channel Advanced Power MOSFET
Features
• 100V/60A, RDS (ON) =17 mΩ(Typ.)@VGS=10V RDS (ON) =18.5 mΩ(Typ.)@VGS=...
|
|
Datasheet
|
RU1H60R
|
Overview
RU1H60R
N-Channel Advanced Power MOSFET
Features
• 100V/60A, RDS (ON) =17 mΩ(Typ.
)@VGS=10V RDS (ON) =18.
5 mΩ(Typ.
)@VGS=4.
5V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• Switching Applications
Pin Description
TO-220
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS...
Similar Datasheet