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VS-10UT10, VS-10WT10FN
Vishay Semiconductors
High Performance Generation 5.
0
Schottky Rectifier, 10 A
I-PAK (TO-251AA)
Base cathode
4
D-PAK (TO-252AA)
Base cathode
4
13 Anode 2 Anode
Cathode
VS-10UT10
2
1 Cathode 3
Anode
Anode
VS-10WT10FN
PRODUCT SUMMARY
Package
IF(AV) VR VF at IF IRM max.
TJ max.
Diode variation EAS
I-PAK (TO-251AA), D-PAK (TO-252AA)
10 A 100 V 0.
66 V 4 mA at 125 °C 175 °C Single die 54 mJ
FEATURES • 175 °C high performance
Schottky diode • Very low forward voltage drop • Extremely low reverse leakage • Optimized VF vs.
IR trade off for high efficiency • Increased ruggedness for reverse avalanche
capability • RBSOA available • Negligible switchin...