Part Number
|
RQK0601AGDQS |
Manufacturer
|
Renesas |
Description
|
N-Channel MOSFET |
Published
|
Apr 28, 2016 |
Detailed Description
|
RQK0601AGDQS
Silicon N Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 56 mΩ typ (VGS = 10 V, ID ...
|
Datasheet
|
RQK0601AGDQS
|
Overview
RQK0601AGDQS
Silicon N Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 56 mΩ typ (VGS = 10 V, ID = 2.
5 A)
• Low drive current • High speed switching • 4.
5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A (Package name: UPAK R )
1 2 3
4
Note: Marking is “AG”.
REJ03G0575-0400 Rev.
4.
00
Jun 22, 2006
2, 4 D
1.
Gate 1 G 2.
Drain
3.
Source 4.
Drain S 3
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current Drain peak current
ID
ID
Note1 (pulse)
Body - drain diode reverse drain current Channel dissipation Channel dissipation
IDR
Pch Note2
Pch
Note1 (pul...
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