Part Number
|
RQK0605JGDQA |
Manufacturer
|
Renesas |
Description
|
N-Channel MOSFET |
Published
|
Apr 28, 2016 |
Detailed Description
|
RQK0605JGDQA
Silicon N Channel MOS FET Power Switching
Features
Low on-resistance RDS(on) = 82 m typ (VGS = 10 V, ID ...
|
Datasheet
|
RQK0605JGDQA
|
Overview
RQK0605JGDQA
Silicon N Channel MOS FET Power Switching
Features
Low on-resistance RDS(on) = 82 m typ (VGS = 10 V, ID = 1.
5 A)
Low drive current High speed switching 4.
5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
3
1 2
Note: Marking is “JG”.
Preliminary Datasheet
R07DS0309EJ0500 (Previous: REJ03G1278-0400)
Rev.
5.
00 Mar 28, 2011
3 D
G 1.
Source 2 2.
Gate
3.
Drain S 1
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation
VDSS
VGSS
ID ID(Pulse) Note1
IDR Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1...
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