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Part Number
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MTB060N06I3 |
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Manufacturer
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CYStech |
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Description
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N-Channel Enhancement Mode Power MOSFET |
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Published
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Apr 28, 2016 |
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Detailed Description
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CYStech Electronics Corp.
Spec. No. : C708I3 Issued Date : 2014.04.30 Revised Date : 2015.05.05 Page No. : 1/8
N -Chan...
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Datasheet
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MTB060N06I3
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Overview
CYStech Electronics Corp.
Spec.
No.
: C708I3 Issued Date : 2014.
04.
30 Revised Date : 2015.
05.
05 Page No.
: 1/8
N -Channel Enhancement Mode Power MOSFET
MTB060N06I3 BVDSS ID@VGS=10V, TC=25°C
RDSON(MAX)@VGS=10V, ID=10A
RDSON(MAX)@VGS=5V, ID=8A
60V 16A 35mΩ(typ.
) 40mΩ(typ.
)
Features
• Low Gate Charge • Simple Drive Requirement • Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB060N06I3
Outline
TO-251
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
Package
Shipping
MTB060N06I3-0-UA-G
TO-251 (Pb-free lead plating and halogen-free package)
80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and gree...
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