Part Number
|
MTBA5N10J3 |
Manufacturer
|
CYStech |
Description
|
N-Channel Enhancement Mode Power MOSFET |
Published
|
Apr 28, 2016 |
Detailed Description
|
CYStech Electronics Corp.
Spec. No. : C731J3 Issued Date : 2009.07.07 Revised Date : Page No. : 1/7
N -Channel Logic L...
|
Datasheet
|
MTBA5N10J3
|
Overview
CYStech Electronics Corp.
Spec.
No.
: C731J3 Issued Date : 2009.
07.
07 Revised Date : Page No.
: 1/7
N -Channel Logic Level Enhancement Mode Power MOSFET
MTBA5N10J3
BVDSS
100V
ID 10A
Features
• Low Gate Charge • Simple Drive Requirement • Pb-free lead plating & Halogen-free package
RDSON(MAX)
150mΩ
Equivalent Circuit
MTBA5N10J3
Outline
TO-252
G:Gate D:Drain S:Source
GDS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.
1mH, ID=12A, RG=25Ω Repetitive Avalanche Energy @ L=0.
05mH *2 Total...
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