CYStech Electronics Corp.
N-CHANNEL MOSFET (dual
transistors)
MTDN3018S6R
Spec.
No.
: C320S6R Issued Date : 2007.
12.
23 Revised Date :2008.
01.
25 Page No.
: 1/ 7
Features
• Low on-resistance • High ESD capability • High speed switching • Low-voltage drive(4V) • Easily designed drive circuits • Easy to use in parallel • Pb-free package
Equivalent Circuit
MTDN3018S6R
Outline
SOT-363R
Tr1 Tr2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage Gate-Source Voltage
Drain Current
Drain Reverse Current
Power Dissipation
ESD susceptibility
Junction Temperature Storage Temperature
Continuous Pulsed Continuous Pulsed
Symbol
V...