General Purpose
Transistor
2SA1213-G Series (
PNP)
RoHS Device
Features
-Small flat package.
-Power amplifier and switching -applications.
-Low saturation voltage.
-High speed switching time.
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbol Value Unit
Collector-Base voltage
VCBO
-50
V
Collector-Emitter voltage
VCEO
-50
V
Emitter-Base voltage
VEBO
-5
V
Continuous current
IC -2 A
Collector power dissipation
PC
500 mW
Thermal resistance from
junction to ambient
RθJA
250 °C/W
Junction temperature Storage temperature
TJ 150 °C Tstg -55~+150 °C
1 : Base 2 : Collector 3 : Emitter
SOT-89-3L
0.
181(4.
60) 0.
173(4.
40)
0.
061(1.
55) REF.
0.
102(2.
60) 0.
091(...