Ordering number:ENN6388 P-Channel Silicon MOSFET CPH5603 Ultrahigh-Speed Switching Applications Features · Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
· Composite type with 2 MOSFETs contained in a single package, facilitaing high-density mounting.
Package Dimensions unit:mm 2168 [CPH5603] 2.
9 5 4 3 0.
6 0.
2 0.
15 1 0.
95 2 0.
4 0.
6 1.
6 2.
8 0.
05 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.
4 1 : Drain1 2 : Drain2 3 : Gate2 4 ...

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