XP151A11B0MR-G Power MOSFET ETR1117_003 ■GENERAL DESCRIPTION The XP151A11B0MR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible.
■APPLICATIONS ●Notebook PCs ●Cellular and portable phones ●On-board power supplies ●Li-ion battery systems ■FEATURES Low On-State Resistance : Rds(on) = 0.
12Ω@ Vgs = 10V : Rds(on) = 0.
17Ω@ Vgs = 4.
5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 4.
5V N-Cha...

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