Part Number
|
LP2301BLT1G |
Manufacturer
|
LRC |
Description
|
P-Channel MOSFET |
Published
|
May 1, 2016 |
Detailed Description
|
LESHAN RADIO COMPANY, LTD.
20V P-Channel Enhancement-Mode MOSFET
VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(O...
|
Datasheet
|
LP2301BLT1G
|
Overview
LESHAN RADIO COMPANY, LTD.
20V P-Channel Enhancement-Mode MOSFET
VDS= -20V RDS(ON), Vgs@-4.
5V, Ids@-2.
8A = 100 mΩ RDS(ON), Vgs@-2.
5V, Ids@-2.
0A = 150 mΩ Features
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM we declare that the material of product compliance with RoHS requirements.
▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device
Ordering Information
Device
Marking
LP2301BLT1G
0B
Shipping 3000/Tape & Reel
LP2301BLT3G
0B
10,000/Tape & Reel
LP2301BLT1G
3
1 2
SOT– 23 (TO–236AB)
3D
G 1 S 2
Maximum Ratings and Thermal Characteristics (TA = 25o...
Similar Datasheet