ADVANCED INNEFWORPRMOATDIUOCNT Product Summary V(BR)DSS 30V RDS(ON) 25mΩ @ VGS = 10V 28mΩ @ VGS = 4.
5V ID TA = +25°C 6.
2A 5.
8A Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
 Load Switch  DC-DC Converters  Power Management Functions DMN3023L N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)