STP100N8F6 N-channel 80 V, 0.
008 Ω typ.
, 100 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS STP100N8F6 80 V RDS(on)max.
0.
009 Ω ID 100 A PTOT 176 W  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.
The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Order code STP100N8F6 Table 1: Device summary Marking 100N8F6 Package TO-220 Packing Tube February 2016 D...

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