STPSC8TH13TI
Dual 650 V power
Schottky silicon carbide diode in series
,QVXODWHG72$%
Features
No or negligible reverse recovery Switching behavior independent of
temperature Suited for specific bridge-less topologies High forward surge capability Insulated package:
– Capacitance: 7 pF – Insulated voltage: 2500 V rms
Datasheet - production data
Description
The SiC diode is an ultrahigh performance power
Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a
Schottky diode structure with a 650 V rating.
Due to the
Schottky construction, no recovery is shown at turn-off and ringing patterns are negl...