IPT012N08N5
MOSFET
OptiMOSTM5Power-Transistor,80V
Features
•Idealforhighfrequencyswitchingandsync.
rec.
•ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
80
V
RDS(on),max
1.
2
mΩ
ID
400
A
Qoss
208
nC
QG(0V.
.
10V)
178
nC
HSOF Tab
12345 678
Drain Tab
Gate Pin 1
Source Pin 2-8
Type/OrderingCode IPT012N08N5
Package PG-HSOF-8
Marking 012N08N5
RelatedLinks -
1) J-STD20 and JESD22
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