R.
0.
2P.
991602-BEHRE
0809LD60
60 WATT, 28V, 1 GHz LDMOS FET
PRELIMINARY ISSUE
GENERAL DESCRIPTION
The 0809LD60 is a common source N-Channel enhancement mode lateral
MOSFET capable of providing 60 Watts of RF power from HF to 1 GHz.
The device is nitride passivated and utilizes gold metallization to ensure high reliability and supreme ruggedness.
CASE OUTLINE 55QT Common Source
ABSOLUTE MAXIMUM RATINGS
Power Dissipation Device Dissipation @25°C (Pd) Thermal Resistance (θJC)
Voltage and Current Drain-Source (VDSS) Gate-Source (VGS) Temperatures Storage Temperature Operating Junction Temperature 170 W 1.
2°C/W 65V ±20V -65 to +200°C +200°C
ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL ΒVdss Idss ...