10N65 650V N-Channel
MOSFET.
General Description
ShenZhen LuGuang Electronic Technology.
Co.
, Ltd.
Awarded ISO9001:2015; ISO14001:2015; IATF16949:2016; Email:sales05@lgesemi.
com Web: www.
lgesemi.
com Tel: 0086-755-23981105 Fax: 0086-755-23981125 Mobile/WhatsApp:+86-18676792337 Skype ID: jokucn
Features
• 10A, 650V, RDS(on)=0.
63Ω @VGS=10 V • Low gate charge ( typical 45 nC)
• Low Crss ( typical 12pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
This Power
MOSFET is produced by HSDQ using its own advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withsta...