isc N-Channel
MOSFET Transistor
FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source
Voltage-
: VDSS= 800V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.
1Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use a load switch or in PWM applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source
Voltage
800
V
VGS
Gate-Source
Voltage-Continuous
ID
Drain Current-Continuous
±30
V
10
A
IDM
Drain Current-Single Pluse
PD
Total Dissipation @TC=25℃
40
A
36
W
TJ
Max.
Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
T...