IMZ120R045M1
IMZ120R045M1
CoolSiC™ 1200V SiC Trench
MOSFET Silicon Carbide
MOSFET
Features
Very low switching losses Threshold-free on state characteristic Wide gate-source
voltage range Benchmark gate threshold
voltage, VGS(th) = 4.
5V 0V turn-off gate
voltage Fully controllable dv/dt Commutation robust body diode, ready for synchronous rectification Easy to use/drive due to sense (driver) source pin for better control of the gate Temperature independent turn-off switching losses
Gate pin 4
Sense pin 3
Drain pin 1
Source pin 2
Benefits
Efficiency improvement Enabling higher frequency Increased power density Cooling effort reduction Reduction of system complex...