FQA13N80 800V N-Channel
MOSFET
September 2006
QFET
FQA13N80
800V N-Channel
MOSFET
Features
• 12.
6A, 800V, RDS(on) = 0.
75Ω @VGS = 10 V • Low gate charge ( typical 68 nC) • Low Crss ( typical 30pF) com • Fast switching • 100% avalanche tested • Improved dv/dt capability
®
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficient switched m...