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Item No.
: 160622
This specification applies to GaP / GaP LED Chips Structure Mesa structure Electrodes p-side (anode) n-side (cathode) Au alloy Au alloy
3.
Outlines (dimensions in microns) p-Electrode p-Epitaxy GaP n-Epitaxy GaP 250 235 n-Electrode n-Epitaxy GaP n-Substrate GaP
235
110
Wire bond contacts can also be square 4.
Electrical and optical characteristics (T=25°C)
Parameter
Forward
voltage Reverse current Luminous intensity *
Symbol
VF IR IV
Conditions
IF = 2 mA VR = 5 V IF = 2 mA
min
typ
1,95
max
2,20 10
Unit
V µA µcd nm
500
700
Peak wavelength λP IF = 2 mA 568 * On request, wafers will be delivered according to lumin...