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Part Number
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1N2927 |
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Manufacturer
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Advanced Semiconductor |
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Description
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GERMANIUM TUNNEL DIODE |
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Published
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Mar 23, 2005 |
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Detailed Description
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1N2927
GERMANIUM TUNNEL DIODE
PACKAGE STYLE TO-18 DESCRIPTION:
The 1N2927 is Designed for Switching Applications in In...
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Datasheet
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1N2927
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Overview
1N2927
GERMANIUM TUNNEL DIODE
PACKAGE STYLE TO-18 DESCRIPTION:
The 1N2927 is Designed for Switching Applications in Industrial and Miitary Applications.
MAXIMUM RATINGS
IF TJ TSTG TSOLD
O O
500 µA -65 C to +150 C -65 C to +200 C 10 S/250 C
O O O
NONE
CHARACTERISTICS
SYMBOL
IP IV VP VV VF IR
TC = 25 C
O
TEST CONDITIONS
MINIMUM
90
TYPICAL
MAXIMUM
110 35 75 475
UNITS
µA µA mV mV mV mA
IF = 110 µA
600
1000 1.
0
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV.
A
1/1
...
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