1N4448WS
SILICON EPITAXIAL PLANAR DIODE
Fast Switching Diode
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Peak Reverse
Voltage Reverse
Voltage Average Rectified Output Current Forward Continuous Current Non-Repetitive Peak Forward Surge Current (at t = 1 µs) Power Dissipation Junction Temperature Storage Temperature Range
PINNING
PIN 1 2
DESCRIPTION Cathode Anode
12
W2
Top View Marking Code: "W2" Simplified outline SOD-323 and symbol
Symbol VRM VR IO
IFM IFSM Pd Tj Tstg
Value 100 80 150
300 0.
5 200 150 - 65 to + 150
Unit V V mA
mA A mW OC OC
Characteristics at Ta = 25 OC
Parameter
Forward
Voltage at IF = 5 mA at IF = 10 mA at IF = 100 mA at IF = 150 mA Reverse Leakage Current at V...