SILICON MIXER DIODE 1N831 DESCRIPTION: The ASI 1N831 is a Silicon Mixer Diode Designed for Applications Operating From 2.
0 to 4.
0 GHz.
FEATURES: • High burnout resistance • Low noise figure • Hermetically sealed package MAXIMUM RATINGS IF 20 mA VR 1.
0 V PDISS 2.
0 (ERGS) @ TC = 25 °C TJ -55 °C to +150 °C TSTG -55 °C to +150 °C PACKAGE STYLE DO- 7 NONE CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS NF f = 3060 MHz PLO = 1.
0 mW NFif = 1.
5 dB RL = 100 Ω IF = 30 MHz NR f = 3060 MHz PLO = 1.
0 mW NFif = 1.
5 dB RL = 100 Ω IF = 30 MHz LC f = 3060 MHz PLO = 0.
5 mW Z IF RL = 22 Ω f = 1000 Hz frange MINIMUM TYPICAL 300 2.
0 MAXIM 8.
3 1.
5 5.
5 500 4.
0 UNITS dB --- dB Ω GH...

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