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1SS388

Part Number 1SS388
Manufacturer EIC
Description SILICON EPITAXIAL SCHOTTKY BARRER DIODE
Published May 26, 2015
Detailed Description 1SS388 FEATURES : * Small package * Low forward voltage * Low revese current * Pb / RoHS Free MECHANICAL DATA : * Lesd F...
Datasheet 1SS388





Overview
1SS388 FEATURES : * Small package * Low forward voltage * Low revese current * Pb / RoHS Free MECHANICAL DATA : * Lesd Finish : 100% Matte Sn (Tin) * Mounting Position : Any * Qualified Max Reflow Temperature : 260 °C Absolute Maximum Ratings (Ta = 25 °C) Parameter Maximum Peak Reverse Voltage Maximum Reverse Voltage Maximum Average Forward Current Maximum Peak Forward Current Maximum Surge Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Range Electrical Characteristics (Ta = 25 °C) Parameter Forward Voltage Reverse Current Total Capacitance Symbol VF IR CT Certificate : TH97/10561QM Certificate : TW00/17276EM SILICON EPITAXIAL SCHOTTKY BARRER DIODE SOD-523 ...






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