TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS406
High Speed Switching Application
1SS406
Unit: mm
z Low forward
voltage z Low reverse current z Small total capacitance
: VF (3) = 0.
50V (typ.
) : IR= 0.
5μA (max) : CT = 3.
9pF (typ.
)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse
Voltage
VRM
25 V
Reverse
voltage
VR 20 V
Maximum (peak) forward current IFM 100 mA
Average forward current Surge current (10ms) Power dissipation
IO IFSM P*
50 mA 1A 200 mW
USC
Junction temperature
Tj 125 °C
Storage temperature range
Tstg −55 to 125 °C JEDEC
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Note: Using continuously under heavy loads (e.
g.
the application of high temper...