| Part Number | 22N55 |
| Manufacturer | IXYS |
| Title | IXFH22N55 |
| Description | HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr IXFH 22N55 VDSS ID (cont) RDS(on) trr = 550 V = 22 A = 0... |
| Features |
• International standard packages JEDEC TO-247 AD • Low R HDMOSTM process DS (on) • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance ( 5 nH) - easy to drive and to protect • Fast intrinsic Rectifier Applications • Power Factor Control Circu... |
| File Size | 67.64KB |
| Datasheet |
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22N50 : INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 22N50 ·FEATURES ·Drain Current ID= 22A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 500 ±30 V V ID Drain Current-Continuous 22 A PD Total Dissipation @TC=25℃ 275 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANG.