omPreliminary Specifications
CMOS LSI
LE25FV101T
t4U.
c1M (128k words × 8bits) Serial Flash EEPROM
taSheeFeatures
CMOS Flash EEPROM Technology
aSingle 3.
3-Volt Read and Write Operations .
DSector Erase Capability: 256 Bytes per sector wOperating Frequency: 10MHz wLow Power Consumption w Active Current (Read): 25 mA (Max.
)
High Read/Write Reliability Sector-write Endurance Cycles: 104
10 Years Data Retention
Self-timed Erase and Programming
Byte Programming: 35 µs (Max.
)
End of Write Detection: Status Register Read
Standby Current: 20 µA (Max.
) Serial Peripheral Interface (S.
P.
I.
) mode 0.
Hardware Data Protection Packages Available: MSOP8(225mil)
.
comProduct Description
Device Operation...