Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2708AF
GENERAL DESCRIPTION
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High
voltage, high speed switching npn transistor in a plastic full-pack envelope.
Intended for use in horizontal of colour television receivers.
Features exceptional tolerance to base drive and collector current load variations, resulting in a low worst-case dissipation.
Designed to withstand VCES pulses up to 1700 V.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter
voltage peak value Collector-emitter
voltage (open base) Collector current (DC) Collector current peak value Total power dissipati...