FEATURES
• 262,144 bytes by 8-bit organization • Fast access time: 70/90/120 ns • Low power consumption
– 50mA maximum active current – 100uA maximum standby current • Programming and erasing
voltage 12V ± 5% • Command register architecture – Byte Programming (15us typical) – Auto chip erase 5 seconds typical
(including preprogramming time) – Block Erase • Optimized high density blocked architecture – Four 4-KB blocks (Top) – Fourteen 16-KB blocks – Four 4-KB blocks (Bottom)
MX28F2000P
2M-BIT [256K x 8]
CMOS FLASH MEMORY
• Auto Erase (chip & block) and Auto Program – DATA polling – Toggle bit
• 10,000 minimum erase/program cycles • Latch-up protected to 100mA from -1 to VCC+1V • Advanced CM...