isc N-Channel
MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤9.
1mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Ultra Low On-resistance ·Fast Switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage
55
V
VGS
Gate-Source
Voltage
±20
V
ID
Drain Current-Continuous
100
A
PD
Total Dissipation @TC=25℃
190
W
Tj
Max.
Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-case thermal resistance
MAX 0.
79
UNIT ℃/W
2N0609
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